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| PRELIMINARY SFF9130-28D SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * Rugged construction with poly silicon gate * Low RDS (on) and high transconductance * Excellent high temperature stability * Very fast switching speed * Fast recovery and superior dv/dt performance * Increased reverse energy capability * Low input transfer capacitance for easy paralleling * Hermetically sealed surface mount package * TX, TXV and Space Level screening available * Replaces: 2x IRF9130 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (Both) Total Device Dissipation TC = 25oC TC = 55oC TC = 25oC TC = 100oC -11 AMP -100 VOLTS 0.30S DUAL UNCOMMITED P-CHANNEL POWER MOSFET 28 PIN CLCC SYMBOL VDS VGS ID Top & Tstg R 2JC PD EAS EAR VALUE -100 20 -11 -7 -55 to +150 3.5 36 37 84 7.5 UNIT Volts Volts Amps o C o C/W Watts mJ mJ Single Pulse Avalange Energy Repetitive Avalange Energy PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE (1): 16 - 21 DRAIN (1): 24 - 28 GATE (1): 22 SOURCE (2): 9 - 14 DRAIN (2): 2 - 6 GATE (2): 8 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0035D PRELIMINARY SFF9130-28D SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =1mA) Temperature Coefficient of Breakdown Voltage Drain to Source ON State Resistance 1/ (VGS = -10 V) Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 7A) Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS =0 V, T A = 25oC ) (VDS = 80% rated VDS, VGS =0 V, TA = 125oC ) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forward Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance At rated VGS VGS = -10 Volts 50% rated VDS ID = -11A VDD = 50% of rated VDS ID = 11A RG = 7.5S ID = 7A ID = 11A SYMBOL MIN TYP MAX UNIT BVDSS )BVDSS )TJ RDS(on) VGS(th) gfs -100 -2.0 3.0 15 1 2 - 0.87 5.0 26 3 14 15 10 30 12 125 860 350 125 0.30 0.35 -4.0 -25 250 -100 100 29 7.1 21 60 140 140 140 -4.7 250 3 - V V S V S(E) IDSS IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD :A nA nC nsec V nsec :C pF TJ = 25oC IF = 10A di/dt = 100A/:sec VGS = 0 Volts VDS = -25 Volts f = 1 MHz trr QRR Ciss Coss Crss For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize RDS(on) and maximize current carrying capability. |
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